O 2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si 0.4 Ge 0.6 /Ge quantum wells
O 2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si 0.4 Ge 0.6 /Ge quantum wells
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纳米级 Si 0.4 Ge 0.6 /Ge 量子阱超低能 SIMS 深度剖析的 O 2 探针样品条件
DOI：
10.1002/sia.4963
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发表时间：
2012
影响因子：
1.7
通讯作者：
Morris R
中科院分区：
文献类型：
--
作者：
Morris R
给出了从Si1−xGex/Ge量子阱结构(0.6≤x≤1)获得高深度分辨率SIMS深度剖面所需的O2+探针取样条件和后续数据分析。对于初级束流能量Ep&Gt；500 eV和接近1，Ge+电离几率的显著降低导致了不具有代表性和无法量化的深度分布。对于EP≤ 500 EV，观察到Ge+信号随x的单调增加，导致了代表样品结构的轮廓并使x能够被找到。还使用逐点方法建立了深度标尺，其中考虑到了局部侵蚀速率，这是X的函数。Si1、−、xGex层和Ge层的成分和厚度都与X射线和透射电子显微镜的结果非常一致。版权所有©2012 John Wiley&Sons，Ltd.
The O2+probe‐sample conditions and subsequent data analysis required to obtain high depth resolution SIMS depth profiles from Si1−xGex/Ge quantum well structures (0.6 ≤x≤ 1) are presented. For primary beam energies Ep>500 eV andxapproaching 1, a significant decrease in the Ge+ionisation probability resulted in unrepresentative and unquantifiable depth profiles. For Ep≤ 500 eV, a monotonic increase in the Ge+signal withxwas observed resulting in profiles representative of the sample structure and enablingxto be found. A depth scale was also established using a point‐by‐point approach taking into account the local erosion rate, which is a function ofx. Both the composition and the thickness of the Si1−xGexand Ge layers were found to be in excellent agreement with those obtained using X‐ray and transmission electron microscopy. Copyright © 2012 John Wiley & Sons, Ltd.