Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
复制标题
库仑封锁状态下半导体耦合量子点的耦合特性
DOI：
10.1143/jjap.37.7161
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
L. Kouwenhoven
中科院分区：
文献类型：
--
作者：
K. Ishibashi;T. Oosterkamp;R. V. Hijman;L. Kouwenhoven
利用表面栅极在GaAs/AlGaAs异质结构中实现了二维电子气（2DEG）中的串联耦合量子点，并在稀释冰箱温度下进行了输运测量。发现电输运是由库仑阻塞和共振隧穿决定的。当两点被充分隔离时，共振峰的能量宽度可以小于热能。通过改变附着在每个点上的两个栅极，测量了弱耦合和强耦合条件下的电荷稳定性图。随着耦合的增加，电流谐振峰的宽度变化明显，而电容耦合变化不大。用简单的电容模型对实验结果进行了分析。
Coupled quantum dots in series have been realized in two dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures using the surface gate, and transport measurements have been performed at the dilution refrigerator temperature. The electrical transport was found to be determined by the Coulomb blockade and the resonant tunneling. The energy width of the resonant peak can be smaller than the thermal energy when two dots are sufficiently isolated. The charge stability diagram, by changing two gates attached to each dot, was measured for weak and strong coupling conditions. The width of the current resonant peak changed significantly as the coupling was increased, while the capacitive coupling did not change so much. The experimental result was analyzed using a simple capacitance model.