Electron-phonon scattering in topological insulators

Electron-phonon scattering in topological insulators
复制标题

DOI:
10.1103/physrevb.83.245322
复制
发表时间:
2011-06-29
期刊:
影响因子:
3.7
通讯作者:
Egger, Reinhold
Egger, Reinhold
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Giraud, Sebastien;Egger, Reinhold

文献摘要

被引文献

相似文献

我们制定和应用强拓扑绝缘体的表面态的电子-声子相互作用的理论。声子使用各向同性弹性连续介质理论与无应力边界条件建模,并通过变形势与狄拉克表面费米子相互作用。我们讨论了准粒子寿命的温度依赖性的光电发射和表面电阻率。
We formulate and apply a theory of electron-phonon interactions for the surface state of a strong topological insulator. Phonons are modeled using an isotropic elastic continuum theory with stress-free boundary conditions and interact with the Dirac surface fermions via the deformation potential. We discuss the temperature dependence of the quasiparticle lifetime in photoemission and of the surface resistivity.