HVCMOS Monolithic Sensors for the High Luminosity Upgrade of ATLAS Experiment
HVCMOS Monolithic Sensors for the High Luminosity Upgrade of ATLAS Experiment
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DOI：
10.1088/1748-0221/12/04/c04001
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发表时间：
2017-04-01
影响因子：
1.3
通讯作者：
Peric, I.
中科院分区：
文献类型：
--
作者：
Blanco, R.;Zhang, H.;Peric, I.
本文介绍了几种单片像素检测器的设计实现在一个高压CMOS技术。所有芯片的总尺寸为1 cm x 1 cm。像素矩阵通过读出单元类型、像素类型和像素地址复用来区分。设计细节和第一次测量结果进行了说明。
This paper describes several monolithic pixel detector designs implemented in a highvoltage CMOS technology. The total size of all chips is 1 cm x 1 cm. The pixel matrices are distinguished by the readout cell type, the pixel type and the pixel address multiplexing. Design details and first measurement results are described.