Magnetic domain engineering in SrRuO3 thin films
Magnetic domain engineering in SrRuO3 thin films
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DOI：
10.1038/s41535-020-00275-5
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发表时间：
2020-10
影响因子：
5.7
通讯作者：
Wenbo Wang;Lin Li;Junhua Liu;Binbin Chen;Yaoyao Ji;Jun Wang;Guanglei Cheng;Yalin Lu;
中科院分区：
文献类型：
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作者：
Wenbo Wang;Lin Li;Junhua Liu;Binbin Chen;Yaoyao Ji;Jun Wang;Guanglei Cheng;Yalin Lu;
铁磁薄膜中的磁畴工程是自旋电子学和存储器件合理设计的重要途径。虽然磁畴的形成已经被广泛研究，但人工控制磁畴仍然具有挑战性。在这里，我们提出了通过结构域工程控制的磁畴形成在范例SrRuO 3/SrTiO 3异质结构。通过工程化的错切方向破坏SrTiO 3衬底的对称性，可以很好地控制SrRuO 3薄膜中孪晶畴的形成。通过对孪晶畴结构的x射线衍射分析和反转过程的磁成像，证明了孪晶畴结构与磁畴结构之间的一一对应关系，从而导致了孪晶畴薄膜中的多步磁化翻转和异常霍尔效应。我们的工作揭示了通过结构域工程控制磁畴的形成，这将为所需的性能和器件应用铺平道路。
Magnetic domain engineering in ferromagnetic thin films is a very important route toward the rational design of spintronics and memory devices. Although the magnetic domain formation has been extensively studied, artificial control of magnetic domain remains challenging. Here, we present the control of magnetic domain formation in paradigmatic SrRuO3/SrTiO3heterostructures via structural domain engineering. The formation of structural twin domains in SrRuO3films can be well controlled by breaking the SrTiO3substrate symmetry through engineering miscut direction. The combination of x-ray diffraction analysis of structural twin domains and magnetic imaging of reversal process demonstrates a one-to-one correspondence between structural domains and magnetic domains, which results in multi-step magnetization switching and anomalous Hall effect in films with twin domains. Our work sheds light on the control of the magnetic domain formation via structural domain engineering, which will pave a path toward desired properties and devices applications.