A novel technique to synthesize buserite-type manganese oxide thin film
A novel technique to synthesize buserite-type manganese oxide thin film
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DOI：
10.1016/j.matlet.2008.03.051
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发表时间：
2008-07
影响因子：
3
通讯作者：
M. Nakayama;M. Fukuda
中科院分区：
文献类型：
--
作者：
M. Nakayama;M. Fukuda
采用电化学和离子交换相结合的方法制备了水锰矿型层状镁锰氧化物薄膜。在水铝石层之间的Mg2+离子对于与溶液中的一价阳离子的离子交换是稳定的，同时它们可以在氧化时被电化学排除以用于电荷补偿。
Buserite-type layered magnesium manganese oxide has been prepared in a thin film form by means of the combination of electrochemical and ion-exchange processes. Mg2+ions between the layers of buserite are stable toward ion-exchange with monovalent cations in solution while they can be excluded electrochemically for charge-compensation upon oxidation.