A high-responsivity and broadband photoconductive terahertz detector based on a plasmonic nanocavity

A high-responsivity and broadband photoconductive terahertz detector based on a plasmonic nanocavity
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基于等离子体纳米腔的高响应度宽带光电导太赫兹探测器

DOI:
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发表时间:
2018
影响因子:
4
通讯作者:
M. Jarrahi
M. Jarrahi
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
N. Yardimci;D. Turan;S. Cakmakyapan;M. Jarrahi

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我们提出了一种用于太赫兹时域成像和光谱系统的光电导太赫兹探测器,无需在光电导有源区域使用短载流子寿命半导体。等离子体纳米腔用于形成探测器的光电导活性区域,以将大部分光生载流子的传输时间限制在亚皮秒量级,并消除对短载流子寿命半导体的需要。我们证明,所提出的探测器能够在 5 mW 光泵浦功率下检测 0.1–4.5 THz 频段的太赫兹脉冲,动态范围超过 100 dB,表现出与基于短载流子寿命衬底的最先进的光电导太赫兹探测器相当的性能。我们提出了一种用于太赫兹的光电导太赫兹探测器时域成像和光谱系统,无需在光电导有源区域使用短载流子寿命半导体。等离子体纳米腔用于形成探测器的光电导活性区域,以将大部分光生载流子的传输时间限制在亚皮秒量级,并消除对短载流子寿命半导体的需要。我们证明,所提出的探测器能够在 5 mW 光泵浦功率下检测 0.1–4.5 THz 频段的太赫兹脉冲,动态范围超过 100 dB,表现出与基于短载流子寿命衬底的最先进的光电导太赫兹探测器相当的性能。
We present a photoconductive terahertz detector to be used in terahertz time-domain imaging and spectroscopy systems without utilizing a short-carrier lifetime semiconductor for the photoconductive active region. A plasmonic nanocavity is used to form the photoconductive active region of the detector to limit the transport time of the majority of the photo-generated carrier to a sub-picosecond order and eliminate the need for a short-carrier lifetime semiconductor. We demonstrate that the presented detector is capable of detecting terahertz pulses over a 0.1–4.5 THz frequency band with more than a 100 dB dynamic range under a 5 mW optical pump power, exhibiting a comparable performance with the state-of-the-art photoconductive terahertz detectors based on short-carrier lifetime substrates.We present a photoconductive terahertz detector to be used in terahertz time-domain imaging and spectroscopy systems without utilizing a short-carrier lifetime semiconductor for the photoconductive active region. A plasmonic nanocavity is used to form the photoconductive active region of the detector to limit the transport time of the majority of the photo-generated carrier to a sub-picosecond order and eliminate the need for a short-carrier lifetime semiconductor. We demonstrate that the presented detector is capable of detecting terahertz pulses over a 0.1–4.5 THz frequency band with more than a 100 dB dynamic range under a 5 mW optical pump power, exhibiting a comparable performance with the state-of-the-art photoconductive terahertz detectors based on short-carrier lifetime substrates.