Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment
Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment
复制标题
ATLAS 实验中外部像素层的 180 nm CMOS 单片像素开发
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
J. V. Hoorne
中科院分区：
文献类型：
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作者：
T. Kugathasan;Tianyang Wang;T. Hemperek;C. Buttar;J. Rousset;H. Mugnier;L. Musa;D. Schaefer;R. Cardella;Abhishek Sharma;M. Dalla;I. Berdalovic;N. E. Plaja;W. Snoeys;R. Bates;C. Sbarra;C. S. Sánchez;C. S. Sánchez;H. Pernegger;C. Riegel;C. Riegel;N. Wermes;E. J. Schioppa;P. Riedler;K. Moustakas;C. A. M. Tobon;Bastien Blochet;D. Maneuski;J. V. Hoorne
欧洲核子研究中心高亮度大型强子对撞机ATLAS跟踪探测器（ITk）的升级需要开发新型辐射硬硅传感器技术。CMOS传感器处理的最新发展提供了将高电阻率衬底与片上高压偏置相结合的可能性，以实现大耗尽有源传感器体积。我们对耗尽单片有源像素传感器（DMAPS）进行了表征，该传感器是在用于ALICE实验的单片传感器开发框架中的TowerJazz 180 nm CMOS工艺中采用一种新的改进成像工艺生产的。在这种改进的工艺中制造的传感器具有敏感层完全耗尽，传感器电容仅为几个fF和辐射容限高达1015 neq/cm2的特点。本文综述了在束流试验和实验室中使用放射源和边缘TCT测量电荷收集特性的方法。这些测量结果表明，使用改进的工艺制造的传感器获得的辐射硬度显着提高。这为ATLAS ITk的两个大型示范装置的设计开辟了道路。为了实现与跟踪器外部像素层要求兼容的设计，从1.8 V电源获取500 nA的电荷敏感前端与快速数字读出架构相结合。具有25 ns时间分辨率的低功耗前端利用低传感器电容来降低噪声和模拟功率，而实现的读出架构通过减少数字活动来最小化功耗。
The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.
影响因子：
1.3
作者：
H. Pernegger;R. Bates;C. Buttar;M. Dalla;J. V. Hoorne;T. Kugathasan;D. Maneuski;L. Musa;P. Riedler;C. Riegel;C. Sbarra;D. Schaefer;E. J. Schioppa;W. Snoeys
通讯作者：
H. Pernegger;R. Bates;C. Buttar;M. Dalla;J. V. Hoorne;T. Kugathasan;D. Maneuski;L. Musa;P. Riedler;C. Riegel;C. Sbarra;D. Schaefer;E. J. Schioppa;W. Snoeys