Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects
Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects
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DOI：
10.1007/s11664-012-1952-6
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发表时间：
2012-02
影响因子：
2.1
通讯作者：
M. Huang;S. M. Zhou;L. D. Chen
中科院分区：
文献类型：
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作者：
M. Huang;S. M. Zhou;L. D. Chen
在150°C、5.0 × 103 A/cm 2电流密度下，研究了电迁移（EM）对线型Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu互连线界面反应的影响.当Cu原子处于顺风扩散状态时，与时效状态相比，EM增强了Cu原子向对面Ni-P/Sn（阳极）界面的跨焊扩散，导致界面金属间化合物（IMC）由Ni 3Sn 4转变为（Cu，Ni）6Sn 5。然而，在Sn/Cu（阴极）界面处，界面IMC保持为Cu 6Sn 5（含有小于0.2wt.% Ni）和Cu 3Sn。当Ni原子处于顺风扩散时，只有极少量的Ni原子扩散到对面的Cu/Sn（阳极）界面，界面IMC保持为Cu 6Sn 5（含量小于0.6wt.% Ni）和Cu 3Sn。结果表明，与时效处理相比，EM处理显著加速了Ni原子从Ni-P和界面Ni 3Sn 4中的溶解，导致Ni 3 P和Ni 2SnP快速长大，界面Ni 3Sn 4消失，大颗粒（Ni，Cu）3Sn 4在Sn钎料基体中聚集。界面Ni 3Sn 4 IMC完全溶解后，Ni 3 P和Ni 2SnP的生长动力学明显加快，但仍遵循1/2规律。
The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 103A/cm2. When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) interface compared with the aging case, resulting in the transformation of interfacial intermetallic compound (IMC) from Ni3Sn4into (Cu,Ni)6Sn5. However, at the Sn/Cu (cathode) interface, the interfacial IMCs remained as Cu6Sn5(containing less than 0.2 wt.% Ni) and Cu3Sn. When Ni atoms were under downwind diffusion, only a very small quantity of Ni atoms diffused to the opposite Cu/Sn (anode) interface and the interfacial IMCs remained as Cu6Sn5(containing less than 0.6 wt.% Ni) and Cu3Sn. EM significantly accelerated the dissolution of Ni atoms from the Ni-P and the interfacial Ni3Sn4compared with the aging case, resulting in fast growth of Ni3P and Ni2SnP, disappearance of interfacial Ni3Sn4, and congregation of large (Ni,Cu)3Sn4particles in the Sn solder matrix. The growth kinetics of Ni3P and Ni2SnP were significantly accelerated after the interfacial Ni3Sn4IMC completely dissolved into the solder, but still followed thet1/2law.