SURFACE-DIFFUSION MODEL IN SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION
SURFACE-DIFFUSION MODEL IN SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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DOI：
10.1063/1.351900
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发表时间：
1992-12-15
影响因子：
3.2
通讯作者：
OKAMOTO, K
中科院分区：
文献类型：
--
作者：
YAMAGUCHI, K;OGASAWARA, M;OKAMOTO, K
采用常压-金属有机化学气相沉积方法，利用W和SiO2掩膜进行了GaAs的选择性外延生长，在掩膜边缘明显观察到无沉积区。利用表面扩散模型分析了掩膜上反应物的表面浓度，提出了一种估算掩膜表面扩散长度的新方法。在610℃下，SiO2和W掩模表面的扩散长度分别为0.45和0.07 μ m。表面扩散长度随衬底温度的降低而增加，在原子束辐照下表面扩散长度变长。
Selective epitaxial growth of GaAs was carried out by atmospheric pressure-metalorganic chemical vapor deposition using W and SiO2 masks, and a deposition-free region was clearly observed along the edge of the masks. The surface concentration of the reactant species on the masks was analyzed by a surface-diffusion model and a new method to estimate the surface-diffusion length on the masks was proposed. The surface-diffusion length on SiO2 and W masks were 0.45 and 0.07 mum at 610-degrees-C, respectively. The surface-diffusion length increased with decreasing the substrate temperature and became longer on the masks irradiated by an atom beam.