Electric transitions in CePd2Si2 studied by resonant x-ray emission spectroscopy at high pressures and low temperatures
Electric transitions in CePd2Si2 studied by resonant x-ray emission spectroscopy at high pressures and low temperatures
复制标题
通过共振 X 射线发射光谱在高压和低温下研究 CePd2Si2 中的电转变
DOI：
10.1103/physrevb.86.235131
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发表时间：
2012
影响因子：
3.7
通讯作者：
et al.,
中科院分区：
文献类型：
--
作者：
J. Mizuki;H. Yamaoka;et al.,
利用部分荧光产额x射线吸收光谱和共振x射线发射光谱在Ceedge研究了重费米子体系cepdsi电子结构的温度和压力依赖性。为了比较，还测量了cerhsi2的温度依赖性。在这两种化合物中，Ce在环境压力下都处于弱混合价态，主要是由于组分的贡献很小。在低至8 K的温度下，没有观察到Ce价的温度依赖性。然而，在CePdSiat 19k中，Ce价随着压力的增加而持续增加，表明压力引起了状态的离域。基于单杂质安德森模型的理论计算较好地再现了实验结果。还讨论了基态价差与测量价差的压力依赖性，包括末态效应。
Temperature and pressure dependences of the electronic structure of the heavy-fermion system CePdSihave been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ceedge. The temperature dependence has also been measured for CeRhSifor comparison. In both compounds Ce is in a weakly mixed valence state at ambient pressure, mostlywith a small contribution from thecomponent. No temperature dependence of the Ce valence is observed at temperatures as low as 8 K. In CePdSiat 19 K, however, the Ce valence shows a continuous increase with pressure, indicating pressure-induced delocalization of thestates. Theoretical calculations based on the single impurity Anderson model reproduce the experimental results well. Pressure dependence of the difference between the ground state valence and the measured valence including the final state effect is also discussed.