Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors
Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors
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DOI：
10.1088/0256-307x/23/11/062
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发表时间：
2006-11
影响因子：
3.5
通讯作者：
Wangshui Wei;S. Jiawei;Guo Shuxu;Zhang Hong-mei;Quan Bao-fu;Ma Dongge
中科院分区：
文献类型：
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作者：
Wangshui Wei;S. Jiawei;Guo Shuxu;Zhang Hong-mei;Quan Bao-fu;Ma Dongge
采用全蒸发法制备了并五苯基有机薄膜晶体管。绝缘膜的厚度可以精确控制，这对器件的工作电压有很大的影响。与单绝缘层的器件相比，采用双绝缘层作为栅介质的器件的电学性能有很好的改善。结果表明，栅漏电流可以降低一个数量级以上，通态电流可以提高一个数量级以上。双绝缘层器件的场效应迁移率高达0.14cm（2）/Vs，阈值电压接近零。结果表明，采用合适的双绝缘层作为栅介质是制备高电学性能OTFT的有效方法。
Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/Vs and near the zero threshold voltage. The results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.