High electric tunability on oxynitride perovskite LaTiO2N thin films
High electric tunability on oxynitride perovskite LaTiO2N thin films
复制标题
DOI：
10.1016/j.matlet.2011.06.095
复制
发表时间：
2011-10
影响因子：
3
通讯作者：
D. Fasquelle;A. Ziani;C. L. Paven-Thivet;L. Gendre;J. Carru
中科院分区：
文献类型：
--
作者：
D. Fasquelle;A. Ziani;C. L. Paven-Thivet;L. Gendre;J. Carru
采用射频反应溅射法在Pt/Ti/SiO2/Si衬底上制备了氧氮化物LaTiO 2N薄膜。X射线衍射分析显示薄膜为多晶结构，扫描电镜显示薄膜表面光滑、晶粒规则有序。我们的膜给出了有趣的值的电调谐性相比，氧化物膜，特别是较薄的一个例外的值为72%，仅3.3V的低电压下获得的。
Oxynitride LaTiO2N thin films were deposited on Pt/Ti/SiO2/Si substrates by RF reactive sputtering. X-ray diffraction analysis highlighted the polycrystalline structure of the films, while SEM showed regular, ordered grains with smooth surface. Our films gave interesting values of electric tunability compared to oxide films, especially the thinner one with an exceptional value of 72% obtained under a low voltage of only 3.3V.