Magnetoconduction in the Correlated Semiconductor FeSi in Ultrastrong Magnetic Fields up to a Semiconductor-to-Metal Transition
Magnetoconduction in the Correlated Semiconductor FeSi in Ultrastrong Magnetic Fields up to a Semiconductor-to-Metal Transition
复制标题
相关半导体 FeSi 在超强磁场中的磁导直至半导体到金属的转变
DOI：
10.1103/physrevlett.127.156601
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发表时间：
2021
影响因子：
8.6
通讯作者：
Kanomata T.
中科院分区：
文献类型：
--
作者：
Nakamura D.;Matsuda Y.H.;Ikeda A.;Miyake A.;Tokunaga M.;Takeyama S.;Kanomata T.
采用射频自谐振螺旋线圈技术研究了关联窄禁带半导体FeSi在电磁磁通压缩兆高斯发生器提供的高达500 T磁场中的磁电阻效应。半导体到金属的过渡完成约270 T观察作为一个尖锐的扭结的磁阻，这意味着关闭的杂交带边的塞曼位移的差距。在温度-磁场相图中，超导体-金属过渡场几乎与温度无关，这与间隙局域态中与跳跃磁导相关的特征磁场相反，表现出显着的温度依赖性。
Magnetoresistance of the correlated narrow-gap semiconductor FeSi was investigated by the radio frequency self-resonant spiral coil technique in magnetic fields up to 500 T, which is supplied by an electromagnetic flux compression megagauss generator. Semiconductor-to-metal transition accomplishes around 270 T observed as a sharp kink in the magnetoresistance, which implies the closing of the hybridization gap by the Zeeman shift of band edges. In the temperature-magnetic field phase diagram, the semiconductor-metal transition field is found to be almost independent of temperature, which is in contrast to a characteristic magnetic field associated with the hopping magnetoconduction in the in-gap localized states, exhibiting a notable temperature dependence.