Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy
Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy
复制标题
使用 X 射线光电子能谱研究 CdF2/CaF2/Si(111) 异质结构中的能带偏移
DOI：
10.1063/1.114595
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发表时间：
1995
影响因子：
4
通讯作者：
N. Sokolov
中科院分区：
文献类型：
--
作者：
A. Izumi;Y. Hirai;K. Tsutsui;N. Sokolov
利用x射线光电子能谱法对分子束外延生长的CdF2/CaF2/Si（111）异质界面处的价带偏移进行了评价，并给出了该异质结构的能带图。结果表明，CdF2/CaF2界面具有较大的导带偏移量（2.9 eV），且CdF2导带边缘的能级低于Si。
The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x‐ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si.