Millimeter wave complex refractive index, complex dielectric permittivity and loss tangent of high purity and compensated silicon
Millimeter wave complex refractive index, complex dielectric permittivity and loss tangent of high purity and compensated silicon
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高纯补偿硅的毫米波复折射率、复介电常数和损耗角正切
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
Xiaohui Li
中科院分区：
文献类型：
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作者：
Mohammed Nurul;Chi;Xiaohui Li
发现单晶高电阻率（11000- ω -cm）掺硼硅在室温（25℃）下在整个毫米波区域具有最低的吸收损耗。补偿硅的毫米波吸收系数值比未掺杂的纯硅得到的值至少小一个数量级。在140 GHz时，补偿硅的损耗正切值低至40 μ rad。硅的介电特性与电阻率的关系研究表明，随着电阻率的增加，存在于所有硅（和其他半导体）中的低频自由载流子吸收消失。采用色散傅立叶变换光谱技术进行测量
Single-crystal high-resistivity (11000- Omega -cm) boron-doped silicon was found to exhibit the lowest absorption loss at room temperature (25 degrees C) in the entire millimeter-wave region. The millimeter-wave absorption coefficient values for the compensated silicon are at least one order of magnitude less than values obtained with undoped pure silicon. At 140 GHz, the loss tangent value of the compensated silicon is as low as 40 mu rad. The study of the dielectric properties of silicon as a function of resistivity reveals that the low-frequency free-carrier absorption present in all silicon (and other semiconductors) vanishes with increasing resistivity. The dispersive Fourier transform spectroscopic technique was utilized for the measurements.<<ETX>>