Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate
Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate
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DOI：
10.1143/jjap.49.04df08
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发表时间：
2010-01-01
影响因子：
1.5
通讯作者：
Kachi, Tetsu
中科院分区：
文献类型：
--
作者：
Kim, Eunhee;Soejima, Narumasa;Kachi, Tetsu
通过电容-电压（C-V）、电流-电压（I-V）和时间相关介质击穿（TDDB）测量研究了具有生长SiO2、退火SiO2和SiNx绝缘体的GaN金属-绝缘体-半导体（MIS）电容器的电学特性。具有SiNx绝缘体的MIS电容器被确定为具有比具有生长和退火的SiO2绝缘体的MIS电容器低的1 × 10（11）cm（-2）eV（-1）的界面陷阱密度。此外，SiNx绝缘体的介电寿命外推到超过20年，即使在室温下的高电压。这些结果表明，高性能功率器件所需的高绝缘体/GaN界面质量和高可靠性可以通过在GaN上沉积SiNx绝缘体来实现。(C)2010日本应用物理学会
The electrical properties of GaN metal-insulator-semiconductor (MIS) capacitors with as-grown SiO2, annealed SiO2, and SiNx insulators were investigated by capacitance-voltage (C-V), current-voltage (I-V), and time-dependent dielectric breakdown (TDDB) measurements. The MIS capacitor with the SiNx insulator was determined to have a lower interface trap density of 1 x 10(11) cm(-2) eV(-1) than the MIS capacitors with the as-grown and annealed SiO2 insulators. In addition, the dielectric lifetime of the SiNx insulator was extrapolated to be more than 20 years at an even high voltage at room temperature. These results indicate that the high insulator/GaN interface quality and high reliability required for high-performance power devices can be achieved by the deposition of the SiNx insulator on GaN. (C) 2010 The Japan Society of Applied Physics