Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing
Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing
复制标题
通过热退火在 6H-SiC (0001) 上外延生长石墨烯
DOI：
10.1088/0256-307x/26/8/088104
复制
发表时间：
2009
影响因子：
3.5
通讯作者：
Xu Xian-Gang
中科院分区：
文献类型：
--
作者：
Kang Chao-Yang;Wei Shi-Qiang;Pan Hai-Bin;Tang Jun;Liu Zhong-Liang;Gao Yu-Qiang;Xu Peng-Shou;Xu Xian-Gang
在超高真空分子束外延室中用热退火法在硅端6H-SiC(0001)衬底上成功生长了外延石墨烯(EG)层。对EG样品的结构和形貌进行了表征
An epitaxial graphene (EG) layer is successfully grown on a Si-terminated 6H-SiC (0001) substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by