Molybdenum impurity states in amorphous silicon and related materials
Molybdenum impurity states in amorphous silicon and related materials
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非晶硅及相关材料中的钼杂质态
DOI：
10.1080/01418639108224436
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
J. Stuke
中科院分区：
文献类型：
--
作者：
M. Stutzmann;J. Stuke
讨论了钼作为电子活性杂质在非晶硅和其它四面体键合非晶半导体中的作用。Mo的存在可以通过顺磁性Mo 5+离子检测到，其产生g值为1.92-1.93的电子自旋共振。在薄膜沉积过程中，氧的存在增强了这种离子的形成。我们目前的实验证据表明，钼在非晶硅可以形成杂质施主的水平，从而可以对名义上未掺杂的样品的电子性质的影响。本文还讨论了薄膜沉积过程中钼的潜在来源。
Abstract The role of molybdenum as an electronically active impurity in amorphous silicon and other tetrahedrally bonded amorphous semiconductors is discussed. The presence of Mo can be detected via the paramagnetic Mo5 + ion, which gives rise to an electron spin resonance with a g value of 1.92–1.93. The formation of this ion is enhanced by the presence of oxygen during deposition of thin films. We present experimental evidence that molybdenum in amorphous silicon can form an impurity donor level and thus can have an influence on the electronic properties of nominally undoped samples. Potential sources of Mo during thin-film depositiion are also discussed.