Magnetism modulation and conductance quantization in a gadolinium oxide memristor.
Magnetism modulation and conductance quantization in a gadolinium oxide memristor.
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DOI：
10.1039/d0cp03767b
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发表时间：
2020-11
期刊：
影响因子：
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通讯作者：
Zhuolin Xie;Shuang Gao;Xiaoyu Ye;Huali Yang;Guodong Gong;Ying Lu;Junya Ye;Gang Liu;
中科院分区：
文献类型：
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作者：
Zhuolin Xie;Shuang Gao;Xiaoyu Ye;Huali Yang;Guodong Gong;Ying Lu;Junya Ye;Gang Liu;
在当前的大数据时代，对更高的信息存储密度、更大的数据处理能力和以存储器为中心的计算能力的要求正在激发全球对能够统一电子电荷和自旋自由度的新型固态电子器件的研究兴趣。本文报道了在单个氧化钆忆阻器中同时实现磁调制和电导量子化。将忆阻器从初始高阻态（HRS）设置到低阻态（LRS）后，室温下的饱和磁化强度显著提高了170%以上，同时在低温下出现了明显的磁阻行为。通过仔细地将忆阻器从LRS重置为HRS，观察到具有良好的可重复性和稳定性的多达32个量化电导状态，这可能允许在未来在单个存储器单元中实现5位存储。此外，忆阻器的电阻开关机制进行了深入的研究与温度依赖性的电阻测试和高分辨率透射电子显微镜检查的帮助。这项工作可以提供一个强大的方法来设计未来的多场调制，高性能的信息设备与集成的数据存储，传感，以及处理功能。
The requests for higher information storage density, greater data processing power, and memory-centric computing capability in the current big data era are motivating global research interests in novel solid-state electronic devices that can unite the electron charge and spin degrees of freedom. Herein, the simultaneous realization of magnetism modulation and conductance quantization in a single gadolinium oxide memristor is reported. A remarkable enhancement of >170% in saturation magnetization at room temperature, accompanied by the emergence of a clear magnetoresistance behavior at low temperature, was obtained after setting the memristor from the initial high resistance state (HRS) into the low resistance state (LRS). By carefully resetting the memristor from the LRS into the HRS, up to 32 quantized conductance states with good repeatability and stability were observed, which could possibly allow achieving 5 bit storage in a single memory cell in the future. Moreover, the resistive switching mechanism of the memristor was thoroughly investigated with the help of temperature-dependent resistance tests and high-resolution transmission electron microscopy examination. This work could provide a powerful approach to design future multi-field modulated, high-performance information devices with integrated data storage, sensing, as well as processing functions.