Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors*
Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors*
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DOI：
10.1088/1674-1056/abd470
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发表时间：
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影响因子：
1.7
通讯作者：
Hao Zou;Lin-An Yang;Xiao-hua Ma;Yi Hao
中科院分区：
文献类型：
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作者：
Hao Zou;Lin-An Yang;Xiao-hua Ma;Yi Hao
分析了不同陷波结构对AlGaN/GaN高电子迁移率晶体管（HEMT）直流（DC）和射频（RF）性能的影响。制作了栅长0.8 μm、栅宽50 μm、源漏距离3 μm的AlGaN/GaN HEMT器件，并在AlGaN/GaN势垒层上采用不同的凹槽结构，以实现所需的DC和RF特性。研究了器件的最大漏电流（Ids，max）、夹断电压（Vth）、最大击穿电压（gm）、栅压摆幅（GVS）、亚阈值电流、栅漏电流、脉冲I-V特性、击穿电压、截止频率（fT）和最大振荡频率（fmax）。结果表明，与传统HEMT相比，双陷波结构HEMT的栅压摆幅提高了30%，击穿电压提高了42.2%，截止频率提高了9%。凹口结构对电流崩塌也有很好的抑制作用。
The effects of various notch structures on direct current (DC) and radio frequency (RF) performances of AlGaN/GaN high electron mobility transistors (HEMTs) are analyzed. The AlGaN/GaN HEMTs, each with a 0.8-μm gate length, 50-μm gate width, and 3-μm source–drain distance in various notch structures at the AlGaN/GaN barrier layer, are manufactured to achieve the desired DC and RF characteristics. The maximum drain current (I ds, max), pinch-off voltage (V th), maximum transconductance (g m), gate voltage swing (GVS), subthreshold current, gate leakage current, pulsed I–V characteristics, breakdown voltage, cut-off frequency (f T), and maximum oscillation frequency (f max) are investigated. The results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing, a 42.2% improvement of breakdown voltage, and a 9% improvement of cut-off frequency compared with the conventional HEMT. The notch structure also has a good suppression of the current collapse.