Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid
Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid
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DOI：
10.1002/pssc.201100406
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发表时间：
2012-03
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影响因子：
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通讯作者：
Shun Sadakuni;J. Murata;Y. Sano;K. Yagi;T. Okamoto;K. Tachibana;H. Asano;K. Yamauchi
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文献类型：
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作者：
Shun Sadakuni;J. Murata;Y. Sano;K. Yagi;T. Okamoto;K. Tachibana;H. Asano;K. Yamauchi
我们开发了一种新的平坦化方法，称为催化剂相关蚀刻（CARE），它利用铂作为催化剂，是浸在氢氟酸（HF）酸溶液。在此过程中，化学蚀刻仅发生在具有平坦表面的铂板的表面附近。与催化剂板的表面接触的GaN衬底上的突起是被铂和HF溶液去除的唯一部分。因此，在不损坏晶体的情况下使表面变平。形态学表征表明，CARE产生光滑的表面与整个基板的单双层原子梯田。横截面透射电子显微镜观察显示表面呈原子级平坦，无亚表面损伤（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have developed a novel planarization method called catalyst-referred etching (CARE), which utilizes platinum as a catalyst that is immersed in hydrofluoric (HF) acid solution. In this process, chemical etching occurs only near the surface of a platinum plate that has a flat surface. The protrusions on a GaN substrate that is in contact with the surface of the catalyst plate are the only parts that are removed by the platinum and HF solution. The surface is therefore flattened without damaging the crystal. Morphological characterization showed that CARE produced smooth surfaces with single bilayer atomic terracing throughout the substrate. Cross-sectional transmission electron microscope observations revealed that the surface was atomically flat with no subsurface damage (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)