Observation of symmetrically decay of A1(longitudinal optical) mode in free-standing GaN bulk single crystal from Li3N flux method
Observation of symmetrically decay of A1(longitudinal optical) mode in free-standing GaN bulk single crystal from Li3N flux method
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DOI：
10.1063/1.4775370
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发表时间：
2013-01
影响因子：
4
通讯作者：
Xiaohong Zhang;C. Zhao;Jiecai Han;Y. N. Wang;J. Jian;G. Wang;Zhonghua Zhang;Huizeng Li;W. Wang;Y. T. Song;Yizhi Liu;H. Bao;Xiaolong Chen;B. Song
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文献类型：
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作者：
Xiaohong Zhang;C. Zhao;Jiecai Han;Y. N. Wang;J. Jian;G. Wang;Zhonghua Zhang;Huizeng Li;W. Wang;Y. T. Song;Yizhi Liu;H. Bao;Xiaolong Chen;B. Song
本文报道了GaN单晶中A1（LO）（纵向光学）和E2（高）声子寿命的拉曼分析及其在77 ~ 770 K温度范围内的变化。GaN中的A1（LO）和E2（高）声子都被观察到主要衰减成两个能量相等的声子[Klemens模型，P. G. Klemens，Phys.Rev.148，845（1966）]。这是一个罕见的例子，一个高品质的独立GaN体单晶显示异常A1（LO）声子衰减。这些结果将对GaN基高速、大功率电子器件的设计和理解产生重要影响。
We report Raman analysis of A1(LO) (longitudinal optical) and E2(high) phonon lifetimes in a bulk GaN single crystal and their temperature dependence from 77 K to 770 K. Both the A1(LO) and E2(high) phonons in GaN were observed decaying primarily into two phonons of equal energy [Klemens model, P. G. Klemens, Phys. Rev. 148, 845 (1966)]. This is a rare example of a high-quality free-standing GaN bulk single crystal displaying abnormal A1(LO) phonon decay. These results will have significant impact on designing and understanding of GaN-based high-speed, high-power electric devices.