AlGaN Channel HEMT With Extremely High Breakdown Voltage
AlGaN Channel HEMT With Extremely High Breakdown Voltage
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DOI：
10.1109/ted.2012.2233742
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发表时间：
2013-01
影响因子：
3.1
通讯作者：
T. Nanjo;A. Imai;Y. Suzuki;Y. Abe;T. Oishi;M. Suita;E. Yagyu;Y. Tokuda
中科院分区：
文献类型：
--
作者：
T. Nanjo;A. Imai;Y. Suzuki;Y. Abe;T. Oishi;M. Suita;E. Yagyu;Y. Tokuda
下一代信息社会需要射频功率模块的增强性能。为了满足这些要求，我们设计了一种采用宽带隙AlGaN作为沟道层的新型高电子迁移率晶体管（HEMT）结构，我们称之为AlGaN沟道HEMT，并对其进行了研究。结果，所制造的AlGaN沟道HEMT具有比常规GaN沟道HEMT高得多的击穿电压，具有良好的夹断操作和足够高的漏极电流密度，而没有明显的电流崩塌。此外，制造的AlGaN沟道高电子迁移率晶体管的特定导通电阻具有竞争力的最佳值的GaN和SiC为基础的设备具有类似的击穿电压。这些结果表明，所提出的AlGaN沟道HEMT是非常有前途的，不仅为信息通信社会，而且在电力电子领域。
Enhanced performance of RF power modules is required in a next-generation information society. To satisfy these requirements, we designed a novel high-electron mobility transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which we called AlGaN channel HEMT, and investigated it. The wider bandgap is more effective for higher voltage operation of HEMTs and contributes to the increase of output power in RF power modules. As a result, fabricated AlGaN channel HEMTs had much higher breakdown voltages than those of conventional GaN channel HEMTs with good pinchoff operation and sufficiently high drain current density without noticeable current collapse. Furthermore, specific on-state resistances of fabricated AlGaN channel HEMTs were competitive with the best values of reported GaN- and SiC-based devices with similar breakdown voltages. These results indicate that the proposed AlGaN channel HEMTs are very promising not only for an information-communication society but also in the power electronics field.