Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity
Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity
复制标题
手性诱导自旋选择性的线性和非线性两端自旋阀效应
DOI：
10.1021/acsnano.0c07438
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发表时间：
2020-11-24
期刊：
影响因子：
17.1
通讯作者：
Xiong, Peng
中科院分区：
文献类型：
--
作者：
Liu, Tianhan;Wang, Xiaolei;Xiong, Peng
非磁性材料中产生自旋极化的各种机制由于其潜在的物理学和自旋电子学中的器件潜力而受到广泛关注。其中一种方案是手性诱导自旋选择性（CISS），其结构手性导致相反自旋的电子具有不同的电导率。自旋过滤所产生的效应已经报道了许多手性分子组装在不同的表面上。然而，微观起源和运输机制仍然存在争议。特别是，基本的Onsager关系被认为排除了铁磁体对CISS的线性响应检测。在这里，我们报告了在（Ga,Mn）As/AHPA-L分子/Au的垂直异质结中csis诱导的磁导的明确观察，通过（Ga,Mn）As的自旋检测直接验证了AHPA-L分子的自旋过滤。使用磁性半导体产生的明显且稳健的磁导信号可以严格检查其偏置依赖性，这显示了线性和非线性响应分量。确定线性响应CISS诱导的双端自旋阀效应对建立可行的CISS理论及其器件表现形式具有重要的约束作用。研究结果为半导体中不使用任何磁性材料的自旋注入和检测提供了一条有前途的途径。
Various mechanisms of electrical generation of spin polarization in nonmagnetic materials have been a subject of broad interest for their underlying physics and device potential in spintronics. One such scheme is chirality-induced spin selectivity (CISS), with which structural chirality leads to different electric conductivities for electrons of opposite spins. The resulting effect of spin filtering has been reported for a number of chiral molecules assembled on different surfaces. However, the microscopic origin and transport mechanisms remain controversial. In particular, the fundamental Onsager relation was argued to preclude linear-response detection of CISS by a ferromagnet. Here, we report definitive observation of CISS-induced magnetoconductance in vertical heterojunctions of (Ga,Mn)As/AHPA-L molecules/Au, directly verifying spin filtering by the AHPA-L molecules via spin detection by the (Ga,Mn)As. The pronounced and robust magnetoconductance signals resulting from the use of a magnetic semiconductor enable a rigorous examination of its bias dependence, which shows both linear- and nonlinear-response components. The definitive identification of the linear-response CISS-induced two-terminal spin-valve effect places an important constraint for a viable theory of CISS and its device manifestations. The results present a promising route to spin injection and detection in semiconductors without using any magnetic material.