Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser
Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser
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DOI：
10.1088/1009-0630/13/6/07
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发表时间：
2011-12
影响因子：
1.7
通讯作者：
Ming Xu;W. Shi;Zenggong Jiang;Shaoqiang Wang;Z. Fu
中科院分区：
文献类型：
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作者：
Ming Xu;W. Shi;Zenggong Jiang;Shaoqiang Wang;Z. Fu
半绝缘砷化镓（GaAs）光电导开关（PCSS）在高压开关领域有着巨大的应用潜力，但其沿面闪络击穿特性限制了其应用。本文基于光激活电荷畴（PACD）理论，提出了GaAsPCSS中的光激活电荷波模型，并从理论和实验上研究了在半导体表面负载介质材料对PACD形成的适度抑制。在28 kV下获得了高达3.7 kA的沿面闪络电流，表明该方法能有效地抑制沿面闪络，提高直流充电GaAs PCSS的使用寿命。
Semi-insulating gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) have great potential for high voltage switching application, however, the utility is restricted by surface flashover which would result in breakdown. In this paper, a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain (PACD) in GaAs PCSS, and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally. Current as high as 3.7 kA was obtained at 28 kV, implying that this method can effectively inhibit the surface flashover and improve the service life of DC charged GaAs PCSS.