High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors
High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors
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DOI：
10.1021/ja100615r
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发表时间：
2010-08-04
影响因子：
15
通讯作者：
Marks, Tobin J.
中科院分区：
文献类型：
--
作者：
Kim, Myung-Gil;Kim, Hyun Sung;Marks, Tobin J.
利用由2-甲氧基乙醇/乙醇胺溶液生长的高性能溶液处理非晶氧化物半导体a-ZnIn4Sn4O15薄膜，结合有机自组装纳米介质作为栅绝缘层，制备了薄膜晶体管(TFT)。这种结构致密的半导体组合物含有最少的锌离子，在不显著迁移率下降的情况下强烈抑制晶体管的关断电流，并提供类似于90 cm(2)V-1 S(-1)(104 cm(2)V-1 S(-1)图案化ZITO薄膜的最大值)的场效应电子迁移率，I-ON/I-OFF比类似于10(5)，亚阈值摆幅类似于0.2V/dec，对于W/L=50的图案化器件，提供的工作电压和lt；2V。系统地研究了ZITO半导体薄膜在Zn9-2xInxSnxO9+1.5x(x=1-4)和ZnIn8-xSnxO13+0.(5x)(x=1-7)范围内的微结构和电子性质，以阐明产生最佳迁移率、I-ON/I-OFF和阈值电压参数的因素。结果表明，In3+和Sn4+混合的结构驰豫和致密化对于减少载流子陷阱和产生载流子氧空位是有效的。与用有机自组装纳米介质制备的TFT相比，用SiO_2栅绝缘层制备的ZnIn4Sn4O15TFT的电子迁移率仅为11 cm(2)V~(-1)S(-1)，I-ON/I-OFF比接近10(5)，亚阈值摆幅接近9.5V/dec。
Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn4Sn4O15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn2+ incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of similar to 90 cm(2) V-1 s(-1) (104 cm(2) V-1 s(-1) maximum obtained for patterned ZITO films), with I-on/I-off ratio similar to 10(5), a subthreshhold swing of similar to 0.2 V/dec, and operating voltage < 2 V for patterned devices with W/L = 50. The microstructural and electronic properties of ZITO semiconductor film compositions in the range Zn9-2xInxSnxO9+1.5x (x = 1-4) and ZnIn8-xSnxO13+0.(5x) (x = 1-7) were systematically investigated to elucidate those factors which yield optimum mobility, I-on/I-off, and threshold voltage parameters. It is shown that structural relaxation and densification by In3+ and Sn4+ mixing is effective in reducing carrier trap sites and in creating carrier-generating oxygen vacancies. In contrast to the above results for TFTs fabricated with the organic self-assembled nanodielectric, ZnIn4Sn4O15 TFTs fabricated with SiO2 gate insulators exhibit electron mobilities of only similar to 11 cm(2) V-1 s(-1) with I-on/I-off ratios similar to 10(5), and a subthreshhold swing of similar to 9.5 V/dec.