Analysis of Sputtering Damage on I-V Curves for Perovskite Solar Cells and Simulation with Reversed Diode Model
Analysis of Sputtering Damage on I-V Curves for Perovskite Solar Cells and Simulation with Reversed Diode Model
复制标题
DOI：
10.1021/acs.jpcc.6b09219
复制
发表时间：
2016-12-22
影响因子：
3.7
通讯作者：
Ito, Seigo
中科院分区：
文献类型：
--
作者：
Kanda, Hiroyuki;Uzum, Abdullah;Ito, Seigo
掺锡氧化铟（ITO）溅射是太阳能电池中有机空穴传输材料的一个破坏性因素。为了更深入地了解在Spiro-OMeO 2上溅射ITO的钙钛矿太阳能电池的器件性能差的原因，本文采用相应的等效电路模型，通过I-V模拟分析进行了深入的研究。首先，获得了具有（FTO/TiO 2（致密）/TiO 2（介孔）/CH_3 NH_3 PbI_3/Spiro-OMe_3/ITO/Au）构型的钙钛矿太阳能电池的实验I-V数据。在ITO上沉积Au层（t = 50 nm）作为接触层。模拟研究表明，ITO溅射到Spiro-OMeO 2上引入了反向肖特基二极管和额外的二极管到器件，这可能与Spiro-OMeO 2层的溅射损伤有关。通过考虑反向二极管元件的参数作为溅射时间的函数，发现反向肖特基二极管的势垒高度由于对Spiro-OMeV的溅射损伤而增加，这可能是器件填充因子降低的关键原因。
Tin-doped indium oxide (ITO) sputtering is known as a damaging cause on organic hole transporting material in solar cells. In order to gain more insights into the reasons for poor device performance of perovskite solar cells by the ITO sputtering on Spiro-OMeTAD, here we present an in-depth study by I-V simulation analysis using corresponding equivalent circuit models. First, experimental I-V data were obtained for the perovskite solar cells with (FTO/TiO2(dense)/TiO2(mesoporous)/CH3NH3PbI3/Spiro-OMeTAD/ITO/Au) configuration. An Au layer (t = SO nm) was deposited on the ITO as a contact layer. The simulation studies indicated that sputtering of ITO onto Spiro-OMeTAD introduced a reverse Schottky diode and an additional diode to the device that could be relating the sputtering damage of the Spiro-OMeTAD layer. By considering the parameter of the reverse diode element as a function of sputtering time, it was found that the barrier height of the reverse Schottky diode was enhanced by the sputtering damage against Spiro-OMeTAD, which could be the key reason for the reduced fill factor of the devices.