Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy
Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy
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固源分子束外延生长 AlGaInP 的电子能带结构
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
J. David
中科院分区：
文献类型：
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作者：
D. Mowbray;O. P. Kowalski;M. Hopkinson;M. S. Skolnick;J. David
本文报道了与GaAs相匹配的（AlxGa1−x）0.52In0.48P晶格的电子能带结构的组分依赖性。通过固体源分子束外延生长的外延层在整个组成范围内具有优异的结构和光学质量。光学光谱技术被用来研究电子能带结构作为一个功能的组成。发现低温直接激子带隙由Eg（x）=1.979+0.704x eV给出，并且对于xc=0.50±0.02，最低带隙变为间接带隙。Al0.52In0.48P的低温激子直接带隙被测量为2.680eV。
The compositional dependence of the electronic band structure of (AlxGa1−x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid‐source molecular‐beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low‐temperature, direct excitonic band gap is found to be given by Eg(x)=1.979+0.704x eV and the lowest band gap becomes indirect for xc=0.50±0.02. The low‐temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV.