Achieving near-zero temperature coefficient of resistivity in atomic layer deposition TiSi x N films through composition tuning
Achieving near-zero temperature coefficient of resistivity in atomic layer deposition TiSi x N films through composition tuning
复制标题
通过成分调节在原子层沉积 TiSi x N 薄膜中实现接近零的电阻率温度系数
DOI：
10.1116/6.0000453
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发表时间：
2020
影响因子：
2.9
通讯作者：
Banerjee, Parag
中科院分区：
文献类型：
--
作者：
Feit, Corbin;Chugh, Srishti;Dhamdhere, Ajit R.;Kim, Hae Young;Dabas, Shaurya;Rathi, Somilkumar J.;Mukherjee, Niloy;Banerjee, Parag
