Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor
Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor
复制标题
DOI：
10.1016/j.ijhydene.2020.11.109
复制
发表时间：
2021-01-23
影响因子：
7.2
通讯作者：
Bououdina, M.
中科院分区：
文献类型：
--
作者：
Abdullah, Q. N.;Ahmed, A. R.;Bououdina, M.
采用热蒸发法在1120 ℃左右制备了纳米结构的β-Ga 2 O3纳米带。随后，采用溶胶-凝胶处理的SnO 2层来涂覆β-Ga 2 O3纳米带。这种简单的沉积技术被证实是一个有前途的路线，将涂层材料到纳米结构的薄膜，从而在一个有吸引力的方法来修改氧化镓的功能。与文献中报道的数据相比，发现SnO 2-官能化的β-Ga 2 O3纳米带对浓度范围（33-1000 ppm）和温度范围（室温200 ℃）内的分析物气体H-2的传感特性大大改善。(C)2020年氢能出版有限责任公司。由爱思唯尔有限公司出版。保留所有权利。
Nanostructured beta-Ga2O3 nanobelts are fabricated by thermal evaporation method at a temperature around of 1120 degrees C. Subsequently, a sol-gel processed SnO2 layer is employed to coat beta-Ga2O3 nanobelts. This simple deposition technique is confirmed to be a promising route to incorporate a coating material onto nanostructured films, resulting in an attractive approach to modify the functionality of gallium oxide. In comparison with the data reported in the literature, the sensing characteristics of SnO2-functionalized beta-Ga2O3 nanobelts to analyte gas H-2 in the concentration range (33-1000 ppm) and within the temperature range (room temperature 200 degrees C) are found to be greatly improved. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.