Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
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DOI：
10.1063/1.3569138
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发表时间：
2011-03-21
影响因子：
4
通讯作者：
Wang, Zhanguo
中科院分区：
文献类型：
--
作者：
Lv, Yuanjie;Lin, Zhaojun;Wang, Zhanguo
利用测量的不同接触面积的Ni肖特基接触的电容-电压曲线以及圆形和矩形AlGaN/AlN/GaN异质结场效应晶体管在低漏源电压下的电流-电压特性，发现极化库仑场散射对圆形和矩形AlGaN/AlN/GaN异质结场效应晶体管的二维电子迁移率有重要影响。此外，AlGaN/AlN/GaN异质结中的极化库仑场散射比AlGaN/GaN中的弱，这是由于AlGaN/AlN/GaN异质结中的AlN过渡层增大了二维电子与极化电荷之间的平均距离。(C)2011年美国物理研究所。[DOI：10.1063/1.3569138]
Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility in both the circular and rectangular AlGaN/AlN/GaN HFETs. Moreover, the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructures is relatively weaker compared to that in AlGaN/GaN heterostructures, which is attributed to the AlN interlayer in AlGaN/AlN/GaN heterostructures to enlarge the average distance between the 2DEG electrons and the polarization charges. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569138]