Fabrication of a Low insertion loss intrinsically switchable BAW filter based on BST FBARs

Fabrication of a Low insertion loss intrinsically switchable BAW filter based on BST FBARs
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基于 BST FBAR 的低插入损耗本质可切换 BAW 滤波器的制作

DOI:
10.1109/mwsym.2017.8058900
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发表时间:
2017
期刊:
2017 IEEE MTT-S International Microwave Symposium (IMS)
影响因子:
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通讯作者:
A. Mortazawi
A. Mortazawi
中科院分区:
--
文献类型:
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作者:
M. Koohi;Seungku Lee;A. Mortazawi

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提出了一种基于钛酸锶钡(Ba&lt;inf&gt;0&lt;/inf&gt;.&lt;inf&gt;5&lt;/inf&gt;Sr&lt;inf&gt;0&lt;/inf&gt;.&lt;inf&gt;5&lt;/inf&gt;TiO&lt;inf&gt;3&lt;/inf&gt;)薄膜体声谐振器的低插入损耗1.5级H‘网络梯形本征可开关体声波滤波器。该滤波器是基于Q&lt;inf&gt;m&lt;/inf&gt;=300和K&lt;inf&gt;t&lt;/inf&gt;/inf&gt;<sup>2</sup>的可开关BST FBAR设计和制造的。当对FBAR施加直流偏置时,可切换滤波器处于导通状态,在2.08 GHz中心频率处提供2.25分贝的插入损耗和58 MHz的3分贝带宽。与以前报道的BST滤波器相比,本文提出的可切换BST滤波器提供了最低的IL。
A Low insertion loss (IL) 1.5 stage H'-network ladder type intrinsically switchable bulk acoustic wave (BAW) filter based on barium strontium titanate (Ba<inf>0</inf>.<inf>5</inf>Sr<inf>0</inf>.<inf>5</inf>TiO<inf>3</inf>) thin film bulk acoustic resonators (FBARs) is presented. The filter is designed and fabricated based on switchable BST FBARs with Q<inf>m</inf>=300 and K<inf>t</inf><sup>2</sup>=6%. When a DC bias is applied to the FBARs, the switchable filter is in its ON state and provides an insertion loss of 2.25 dB with 3-dB bandwidth of 58 MHz at 2.08 GHz center frequency. The switchable BST filter presented in this paper provides the lowest IL as compared to the previously reported BST filters.