Intrinsic optical anisotropy of (001)-grown short-period InAs/GaSb superlattices
Intrinsic optical anisotropy of (001)-grown short-period InAs/GaSb superlattices
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DOI：
10.1103/physrevb.82.235422
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发表时间：
2010-12
影响因子：
3.7
通讯作者：
L. L. Li-L.;W. Xu;F. Peeters
中科院分区：
文献类型：
--
作者：
L. L. Li-L.;W. Xu;F. Peeters
我们从理论上研究了沿001方向生长的非共原子NCA InAs/GaSb超晶格SLs中微观界面不对称MIA引起的本征光学各向异性或极化。采用八波段K·P模型计算电子能带结构，并考虑了MIA效应。采用玻尔兹曼方程方法计算光学性质。我们发现，在NCA InAs/GaSb SLs中，MIA效应导致线偏振光具有较大的面内光学各向异性，其中沿110和11¯0方向偏振光的各向异性最大。110°偏振光的光吸收系数与11°0偏振光的光吸收系数的相对差值大于50%。详细研究了平面内光学各向异性与温度、光激发载流子密度和层宽的关系。该研究对需要偏振控制和选择性的光学器件具有重要意义。
We theoretically investigate the intrinsic optical anisotropy or polarization induced by the microscopic interface asymmetry MIA in no-common-atom NCA InAs/GaSb superlattices SLs grown along the 001 direction. The eight-band K ·P model is used to calculate the electronic band structures and incorporates the MIA effect. A Boltzmann equation approach is employed to calculate the optical properties. We found that in NCA InAs/GaSb SLs, the MIA effect causes a large in-plane optical anisotropy for linearly polarized light and the largest anisotropy occurs for light polarized along the 110 and 11 ¯ 0 directions. The relative difference between the optical-absorption coefficient for 110-polarized light and that for 11 ¯ 0-polarized light is found to be larger than 50%. The dependence of the in-plane optical anisotropy on temperature, photoexcited carrier density, and layer width is examined in detail. This study is important for optical devices which require the polarization control and selectivity.