A Pulsed Power Supply Based on Power Semiconductor Switches and Transmission Line Transformer

A Pulsed Power Supply Based on Power Semiconductor Switches and Transmission Line Transformer
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DOI:
10.1109/tdei.2007.4286527
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发表时间:
2007-08
影响因子:
3.1
通讯作者:
J. Qiu;Kefu Liu;Yifan Wu
J. Qiu;Kefu Liu;Yifan Wu
中科院分区:
工程技术3区
文献类型:
--
作者:
J. Qiu;Kefu Liu;Yifan Wu

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输电线路变压器作为脉冲变压器,由于其比传统绕线变压器具有更好的频率响应特性而受到越来越多的关注。这种变压器基本上由相等长度的传输线(通常使用同轴电缆)组成,在变压器的输入侧并联,在输出侧串联,以便输出电压可以按比例提升。由于外导体的电抗随着输入电压频率的升高而增大,所以当频率足够高时,各传输线的输出电压可以相互隔离。然后通过电压叠加放大输出电压。为了尽量减少电压增益的大量损失和获得低脉冲下垂率,将一级变压器作为一个单元缠绕在一起,通过逐个堆叠可以方便地增加变压器的级数。这种螺旋结构使输电线路变压器更加紧凑。另一方面,随着现代半导体技术的发展,高电压、快速上升时间的功率半导体器件已经生产出来,一个IGBT的集电极发射极击穿电压可达1.7 kV,上升时间为100 ns。本文介绍了一种将传输线变压器与现代功率半导体器件igbt相结合构成的紧凑型脉冲电源。采用高压igbt (VCES=1.7 kV)作为充电开关,在变压器的输入口可获得短脉冲,然后通过10级传输线变压器输出脉冲幅值为10 kV。最后给出了输出电压脉冲波形。
Transmission line transformers (TLT's) as pulse transformers have received increasingly more attention due to their excellent frequency response characteristics over conventional wound transformers. This transformer basically consists of equal lengths of transmission line (normally coaxial cables are used) connected in parallel at the input side of the transformer, and in series at the output side so that the output voltage can be boosted in proportion. Because the reactance of the outer conductor increases with the rise of the frequency of the input voltage, the output voltage of each transmission line can be isolated mutually when the frequency is high enough. Then, the output voltage will be amplified through the voltage superposition. To minimize the substantial loss of voltage gain and obtain a low pulse droop rate, one stage transformer is entwined together as a unit, the number of stages of the transformer can increase easily by piling units one by one. This spiral construction makes the transmission line transformers much more compact. On the other hand, with the development of modern semiconductor technology, high voltage, fast rise time power semiconductor devices have been produced, the collector emitter breakdown voltage of one IGBT is to 1.7 kV and the rise time is 100 ns. This paper describes a kind of compact pulse power supply constructed by combining transmission line transformer and modern power semiconductor devices-IGBTs. High voltage IGBTs (VCES=1.7 kV) have been used as charge switches, short pulses can be obtained at the input port of the transformer, then the output pulse amplitude is 10 kV through a 10-stage transmission line transformer. Finally, the output voltage pulse waveforms are given in the paper.