Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors
Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors
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HfO2-Ge 金属-绝缘体-半导体电容器的固有载流子效应
DOI：
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发表时间：
2005
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影响因子：
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通讯作者：
A. Sotiropoulos
中科院分区：
文献类型：
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作者：
A. Dimoulas;G. Vellianitis;G. Mavrou;E. Evangelou;A. Sotiropoulos
当反转偏置时，具有 HfO2 或其他高 κ 栅极电介质的金属-绝缘体-半导体电容器在高频（1 kHz 或更高）电容-电压特性中表现出异常的低频行为。在这里，我们提供的证据表明，这种效应部分归因于Ge中高本征载流子浓度ni。我们特别表明，反演中的交流电导是热激活的，它受耗尽时的生成复合过程（与 ni 成比例变化）或受扩散限制过程（与 ni2 成比例变化）控制，具体取决于温度是否低于或高于 45°C。从这些测量中，我们还表明，Ge 中的少数载流子响应时间非常短，在微秒范围内（比 Si 短得多），在室温下与 Ni 成反比。这意味着由于高 Ni，反转电荷响应于栅极处的高频信号而快速建立，从而引起观察到的低频......
Germanium metal–insulator–semiconductor capacitors with HfO2 or other high-κ gate dielectrics show unusual low frequency behavior of the high frequency (1 kHz or higher) capacitance-voltage characteristics when biased in inversion. Here, we provide evidence that this effect is partly due to the high intrinsic carrier concentration ni in Ge. We show in particular that the ac conductance in inversion is thermally activated and it is governed either by generation-recombination processes in depletion, varying proportional to ni or by diffusion-limited processes varying as ni2, depending on whether the temperature is below or above 45 °C, respectively. From these measurements, we also show that the minority carrier response time in Ge is very short, in the microsecond range (much shorter than in Si), depending inversely proportional to ni at room temperature. This means that due to high ni, the inversion charge is built fast in response to high frequency signals at the gate, inducing the observed low frequency...