Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
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DOI：
10.1063/1.4744962
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发表时间：
2012-08
影响因子：
4
通讯作者：
K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa;N. Usami;M. Miyao;T. Suemasu
中科院分区：
文献类型：
--
作者：
K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa;N. Usami;M. Miyao;T. Suemasu
（111）在绝缘体上的定向锗薄膜对于先进的电子和光电应用是必不可少的。本文研究了50 nm厚度的非晶锗薄膜在绝缘子上的铝致晶化过程，重点研究了退火温度和Ge与Al之间的扩散控制过程。通过低温退火（325℃）和天然氧化铝（AlOx）扩散控制层的结合，生长的Ge层（111）取向分数高达99%。此外，透射电镜显示锗表面没有缺陷。这种（111）取向锗绝缘体有望成为用于实现下一代器件的各种功能材料的高质量外延模板。
(111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 °C) and the native-oxidized Al (AlOx) diffusion-control layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.