Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field
Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field
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DOI：
10.1063/1.1600842
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发表时间：
2003-08
影响因子：
4
通讯作者：
Hiroshi Takahashi;A. Quema;R. Yoshioka;S. Ono;N. Sarukura
中科院分区：
文献类型：
--
作者：
Hiroshi Takahashi;A. Quema;R. Yoshioka;S. Ono;N. Sarukura
研究了InAs产生的太赫兹(THz)辐射功率的激发通量和磁场特性。在低激发通量下，观察到THz辐射功率的增强与磁场方向无关。随着激发通量的增加，观察到了太赫兹辐射机制的交叉。当激发通量高于这个交叉点时，辐射功率随磁场方向的不同而增强或减小。考虑到InAs表面在有或没有光激载流子屏蔽的情况下THz辐射机制的不同，解释了这些结果。
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is investigated. At low excitation fluence, an enhancement of the THz-radiation power is observed independent of the magnetic-field direction. As the excitation fluence is increased, a crossover of the terahertz radiation mechanism is observed. At excitation fluence above this crossover, the radiation power is either enhanced or reduced depending on the magnetic-field direction. These results are explained by considering the different THz-radiation mechanisms from the InAs surface with or without photoexcited carrier screening.