Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection
Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection
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DOI：
10.1088/1674-1056/21/8/087305
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发表时间：
2012-08
影响因子：
1.7
通讯作者：
Zhigang Wang;Wanjun Chen;Jing Zhang;Bo Zhang;Zhaoji Li
中科院分区：
文献类型：
--
作者：
Zhigang Wang;Wanjun Chen;Jing Zhang;Bo Zhang;Zhaoji Li
在本文中，我们提出了一种单片集成的自保护 AlGaN/GaN 金属绝缘体场效应晶体管 (MISFET)。 AlGaN/GaN MISFET 漏极侧的集成场控二极管具有反向偏压自保护功能。该二极管利用凹进势垒增强模式技术来实现超低压降和低导通电压。在智能单片集成中，该集成二极管可以阻止反向偏压（> 70 V/μm）并抑制漏电流（< 5 × 10−11 A/mm）。与传统的单片集成相比，数值结果表明，与场控二极管集成的MISFET为智能功率集成带来了良好的性能。导通时功率损耗低于50%，无正向电流衰减。
In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal—insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self-protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias (> 70 V/μm) and suppress the leakage current (< 5 × 10−11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.