Quick fabrication of 940nm emitting VCSEL arrays for commercial wafer characterization
Quick fabrication of 940nm emitting VCSEL arrays for commercial wafer characterization
复制标题
快速制造用于商业晶圆表征的 940nm 发射 VCSEL 阵列
DOI：
10.1117/12.2578365
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Baker J
中科院分区：
文献类型：
--
作者：
Baker J
基于VCSEL性能的快速反馈开发用于商业晶片表征的快速制造（QF）方法。我们报告的制造工艺的设计，包括系统的去除耗时的平坦化，氧化和基板研磨的步骤，以及相关的影响设备的性能和产量。我们表现出相当的性能的氧化物限制的QF蚀刻沟槽VCSEL和全过程的设备，我们表明，未氧化的设备表现为大孔径氧化设备。此外，我们证明了类似的性能的基板研磨和非研磨VCSEL之间的1.0-1.2 Ith的电流调谐的差异通常为0.064nm/mA。
Development of a quick fabrication (QF) method for commercial wafer characterisation based on rapid feedback of VCSEL performance. We report on the design of the fabrication process including the systematic removal of time-consuming steps of planarization, oxidation and substrate lapping, and the associated impact on device performance and yield. We show comparable performance of the oxide-confined QF etched trench VCSELs and full process devices and we show that unoxidised devices behave as large aperture oxidised devices. Further, we demonstrate similar performance of substrate-lapped and -unlapped VCSELs between 1.0-1.2 Ith with a difference in current tuning typically 0.064nm/mA.