Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering
Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering
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DOI：
10.1021/ja405112s
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发表时间：
2013-10-09
影响因子：
15
通讯作者：
Kim, Yun-Hi
中科院分区：
文献类型：
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作者：
Kang, Il;Yun, Hui-Jun;Kim, Yun-Hi
电荷载流子迁移率仍然是最具挑战性的问题，应该克服，以实现日常有机电子在不久的将来。在这篇文章中，我们展示了将智能侧链工程引入聚合物半导体可以促进分子间电子通信。两种新的聚合物P-29-DPPDBTE和P-29-DPPDTSE由高导电的二酮基吡咯并吡咯主链和延伸的支化位置调节的侧链组成，显示出前所未有的12 cm（2）/（V.s）的高空穴迁移率。从分子物理和结构研究，我们发现，移动侧链的分支位置远离这些聚合物的主链导致分子间相互作用增加，具有极短的π-π堆积距离，而不损害聚合物的溶解性。结果，即使在室温下使用聚合物制造的器件中也可以实现高空穴迁移率。
Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V.s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short pi-pi stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.