Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer
Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer
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DOI：
10.1149/1.3250936
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发表时间：
2010-01-01
影响因子：
3.9
通讯作者：
Leskela, Markku
中科院分区：
文献类型：
--
作者：
Farm, Elina;Kemell, Marianna;Leskela, Markku
研究了以聚乙烯吡咯烷酮（PVP）薄膜为掩模层的选区原子层沉积（ALD）技术。PVP薄膜采用旋涂法制备，并通过紫外光刻法进行图案化。PVP膜在几种ALD工艺中进行了测试：铱、铂、钌、Al 2 O3和ZrO 2。沉积温度为250-300 ℃。在一般情况下，PVP膜钝化的表面对贵金属的过程中，但氧化膜生长在PVP。然而，氧化物膜没有生长通过衬底表面上的PVP膜，因此，膜仍然可以被图案化，尽管更多地使用剥离方法而不是使用纯选择性区域ALD。(C)2009年电化学学会。[DOI：10.1149/1.3250936]保留所有权利。
Selective-area atomic layer deposition (ALD) was studied using poly (vinyl pyrrolidone) (PVP) films as growth-preventing mask layers. The PVP films were prepared by spin coating and patterned by UV lithography. The PVP films were tested in several ALD processes: iridium, platinum, ruthenium, Al2O3, and ZrO2. The deposition temperatures were 250-300 degrees C. In general, the PVP film passivated the surface against the noble metal processes, but the oxide films grew on PVP. However, the oxide films did not grow through the PVP film on the substrate surface and, therefore, the films could still be patterned, though with more of a lift-off method rather than with pure selective-area ALD. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3250936] All rights reserved.