Photoelectric Properties of Bismuth
Photoelectric Properties of Bismuth
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铋的光电特性
DOI：
10.1103/physrev.60.884
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发表时间：
1941
期刊：
影响因子：
--
通讯作者：
H. Jupnik
中科院分区：
文献类型：
--
作者：
H. Jupnik
使用福勒图对高真空条件下蒸发在玻璃上的六个铋表面进行光电阈值测定。获得的功函数值均在 4.22 和 4.25 ev 之间。对于波长 2537A，在 70°C 至 200°C 范围内没有显着的温度变化，但数据表明在较低温度下存在污染。获得了铋表面的参数 α 值，即光强度为 1 时每秒撞击表面单位面积并吸收量子能量的电子数量，结果发现该参数值与 Maurer 研究的钠表面的参数值一样大 0.03 至 0.1。与钠一样，如果假设每个铋原子的自由电子数为 5，则 α 的值约为 10−2，与杜布里奇设定的上限一样大。
Photoelectric threshold determinations with Fowler plots were made for six bismuth surfaces evaporated on glass under high vacuum conditions. The values obtained for the work function were all between 4.22 and 4.25 ev. There was no significant temperature variation over the range-70 C to 200 C for the wave-length 2537A, but the data indicated contamination at the lower temperatures. Values of the parameter α, the number of electrons that strike unit area of the surface per second and absorb a quantum of energy when the light intensity is unity, were obtained for the bismuth surfaces and found to be 0.03 to 0.1 as great as those of sodium surfaces investigated by Maurer. Like those of sodium, the values of α are∼ 10− 2 as great as the upper limit set by DuBridge if the number of free electrons per bismuth atom is assumed to be five.