The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
复制标题
DOI：
10.1016/j.mee.2012.06.001
复制
发表时间：
2012-10-01
影响因子：
2.3
通讯作者：
He, Suxiang
中科院分区：
文献类型：
--
作者：
Zhao, Yanli;He, Suxiang
为了满足光子饥渴检测的需要，分离吸收分级电荷倍增雪崩光电二极管（SAGCM APDs）越来越受到人们的关注。在本文中，我们详细分析了具有不同亚微米倍增层厚度的平面型SAGCM InGaAs-InP apd的暗电流，考虑了扩散过程、生成-复合过程和隧道过程的影响。据我们所知，这是第一次清楚地证明了SAGCM APD的主要暗电流成分随着倍增增益从表面到体积的变化而变化。我们的发现可能有助于SAGCM结构APD的优化。一种低压工作的最佳InGaAs-InP APD (
To meet the requirement of photon-starved detection, separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) have drawn more and more attentions. In this work, we presents a detailed analysis of dark currents for planar-type SAGCM InGaAs-InP APDs with different sub-micron thicknesses of multiplication layer, considering the effect of the diffusion process, generation-recombination process and tunneling process. According to our knowledge, it is the first time clearly demonstrating that the dominant component of dark current for a SAGCM APD changes with multiplication gain from surface to volume contribution. Our finding could be beneficial to the optimization of an APD with a SAGCM structure. An optimal InGaAs-InP APD with low-voltage operation (