Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
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DOI：
10.1038/nmat2253
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发表时间：
2008-09-01
期刊：
影响因子：
41.2
通讯作者：
Lieber, Charles M.
中科院分区：
文献类型：
--
作者：
Qian, Fang;Li, Yat;Lieber, Charles M.
合理设计和合成结构日益复杂的纳米线可以产生增强和/或新颖的电子和光子功能（1,2）。例如，与均质材料相比，Ge/Si核/壳纳米线作为场效应晶体管(3)和低温量子器件（4,5）表现出了更高的性能，而纳米粗糙化的Si纳米线最近被证明具有异常高的热电性能(6)。在这里，我们报告了第一个基于定义良好的iii -氮化物材料的多量子阱（MQW）核/壳纳米线异质结构，该结构能够在室温下实现宽波长范围的激光。透射电镜研究表明，三角形GaN纳米线芯可以实现n = 3、13和26的高度均匀（InGaN/GaN）(n)量子阱的外延生长和无位错生长，InGaN阱厚度为1-3 nm。单个MQW纳米线结构的光激发产生了与InGaN量子阱成分相关的365至494nm的激光，阈值取决于量子阱数，n。我们的工作表明，纳米线结构的复杂性达到了一个新的水平，它有可能产生独立注入纳米激光器。
Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions(1,2). For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors(3) and low-temperature quantum devices(4,5) compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have an unusually high thermoelectric figure of merit(6). Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature. Transmission electron microscopy studies show that the triangular GaN nanowire cores enable epitaxial and dislocation-free growth of highly uniform (InGaN/GaN)(n) quantum wells with n = 3, 13 and 26 and InGaN well thicknesses of 1-3 nm. Optical excitation of individual MQW nanowire structures yielded lasing with InGaN quantum-well composition-dependent emission from 365 to 494 nm, and threshold dependent on quantum well number, n. Our work demonstrates a new level of complexity in nanowire structures, which potentially can yield free-standing injection nanolasers.