Single-crystal Ti2AlN thin films

Single-crystal Ti2AlN thin films
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DOI:
10.1063/1.1882752
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发表时间:
2005-03
影响因子:
4
通讯作者:
T. Joelsson;A. Hörling;J. Birch;L. Hultman
T. Joelsson;A. Hörling;J. Birch;L. Hultman
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
T. Joelsson;A. Hörling;J. Birch;L. Hultman

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We have produced pure thin-film single-crystal Ti2AlN(0001), a member of the Mn+1AXn class of materials. The method used was UHV dc reactive magnetron sputtering from a 2Ti:Al compound target in a mixed Ar–N2 discharge onto (111) oriented MgO substrates. X-ray diffraction and transmission electron microscopy were used to establish the hexagonal crystal structure with c and a lattice parameters of 13.6 and 3.07A, respectively. The hardness H, and elastic modulus E, as determined by nanoindentation measurements, were found to be 16.1±1GPa and 270±20GPa, respectively. A room-temperature resistivity for the films of 39μΩcm was obtained.