4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n- Substrates
4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n- Substrates
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DOI：
10.1109/led.2016.2521164
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发表时间：
2016-03-01
影响因子：
4.9
通讯作者：
Chow, T. Paul
中科院分区：
文献类型：
--
作者：
Chowdhury, Sauvik;Hitchcock, Collin;Chow, T. Paul
我们实验证明4 H-SiC n沟道，平面栅绝缘栅双极晶体管（IGBT）的180 μ m厚的轻掺杂的独立的n-衬底与离子注入集电极区，和金属氧化物半导体栅极（000 - 1）和（000-1）表面。IGBT在300 W/cm（2）的功耗下显示出20 A/cm（2）的导通状态电流密度。在Si面和C面上测得的阈值电压分别为7.5 V和10.5 V。两种IGBT都显示出正向压降的小的正温度系数，这对于容易的器件并行化是有用的。
We experimentally demonstrate 4H-SiC n-channel, planar gate insulated gate bipolar transistors (IGBTs) on 180-mu m thick lightly doped free-standing n-substrates with ion-implanted collector regions, and metal-oxide-semiconductor gates on (0001) and (000-1) surfaces. The IGBTs show an ON-state current density of 20 A/cm(2) at a power dissipation of 300 W/cm(2). The threshold voltages are measured to be 7.5 V and 10.5 V on Si-face and C-face, respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices.