Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
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DOI：
10.1063/1.3622336
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发表时间：
2011-08-01
影响因子：
3.2
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Feng, Gan;Suda, Jun;Kimoto, Tsunenobu
已经通过微型发光（MU-PL）映射在室温下研究了4H-SIC表层中的螺纹位错（TDS）。通过实验证实了TDS处的非辐射重组的增强，从而导致在390 nm（接近带缘发射）进行的MU-PL强度图中局部PL发射强度降低。 TDS上非同源性重组的行为取决于脱位类型：TDS的螺钉类型比边缘类型表现出对非辐射重组活性的影响更强，这表明了PL发射强度的局部降低更大。此外，MU-PL强度图中TDS的对比很大程度上取决于4H-SIC EPILAYERS的载体寿命。超过0.5 mu的生命值对于获得单个TD的可辨别对比至关重要。 （c）2011年美国物理研究所。 [doi：10.1063/1.3622336]
Threading dislocations (TDs) in 4H-SiC epilayers have been investigated by means of micro-photoluminescence (mu-PL) mapping at room temperature. Enhanced nonradiative recombination at TDs was confirmed experimentally, resulting in a reduced local PL emission intensity in the mu-PL intensity map performed at 390 nm (near band-edge emission). The behavior of nonradiative recombination at TDs depends on the dislocation type: the screw type of TDs shows stronger effect on the nonradiative recombination activity than the edge type, evidencing a larger local reduction of PL emission intensity. Furthermore, the contrast of TDs in the mu-PL intensity map greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 mu s are essential to obtain a discernible contrast for the individual TDs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622336]