Advanced CMOS devices: Challenges and implant solutions

Advanced CMOS devices: Challenges and implant solutions
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先进 CMOS 器件：挑战和植入解决方案

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发表时间：
2014
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通讯作者：
N. Variam
N. Variam
中科院分区：
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文献类型：
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作者：
B. Colombeau;B. Guo;H. Gossmann;F. Khaja;N. Pradhan;A. Waite;K. V. Rao;C. Thomidis;K. Shim;T. Henry;N. Variam

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在本文中，我们首先回顾了先进的CMOS器件的架构和可扩展性的趋势。本文重点介绍了平面MOSFET和FinFET器件技术的关键工艺挑战。我们强调需要先进的植入解决方案，以实现器件的缩放和性能以及可变性的改善。特别是，我们讨论了最新的损伤工程解决方案以及材料改性技术（例如，接触和应变工程）以减少泄漏、提高驱动电流和工艺裕量，同时减少可变性。最后，我们简要讨论了来自新型沟道材料器件（例如，硅锗、锗和III-V族）。
In this paper, we first review the trends for advanced CMOS devices in terms of architectures and scalability. The paper highlights the key process challenges for planar MOSFET and FinFET device technologies. We emphasize the need for advanced implant solutions to enable device scaling and performance as well as variability improvement. Especially, we discuss the latest damage engineering solutions as well as materials modification techniques (e.g., contact and strain engineering) to reduce leakage, improve drive current and process margin with reduced variability. Finally, we briefly discuss the implications and new challenges coming from novel channel material devices (e.g., silicon‐germanium, germanium, and III–V).