Determination of Surface Damage in the Grinding of Silicon Wafers
Determination of Surface Damage in the Grinding of Silicon Wafers
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DOI：
10.1115/imece2003-42309
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Fuqian Yang;Peixing Fei
中科院分区：
文献类型：
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作者：
Fuqian Yang;Peixing Fei
磨削加工是硅制造业的重要工艺之一，是减少切割引起的表面损伤的第一步，是决定硅片表面质量的关键参数之一。为了了解磨削过程中表面损伤的演变过程，采用球窝技术测量磨削玻璃亚表面损伤，并对磨削过程中硅片的表面损伤进行表征。磨料尺寸越大，表面损伤越大，表面裂纹的形成和扩展与此有关。断裂力学由于压痕的尖锐压头被用来利用表面损伤和工艺参数之间的连接。采用微压痕法对研磨后的硅片进行了近表面弹性行为的评价。Copyright © 2003 by ASME
Grinding as one of the important processes for silicon manufacturing industry is the first step to reduce the cutting-caused surface-damage, which is one of key parameters determining the surface quality of silicon wafers. To understand the evolution of surface damage in grinding process, the ball-dimple technique developed for the measurement of the subsurface damage of ground glasses was applied to characterize the surface damage of silicon wafers created in the grinding process. The surface damage increases with abrasive size, which associates with the formation and propagation of surface cracks. Fracture mechanics due to the indentation of sharp indenters was used to exploit the connection between the surface damage and the process parameters. Microindentation was used to evaluate the near-surface elastic behavior of the ground silicon wafers.Copyright © 2003 by ASME